A Study Of Magnetization And Specific Heat In Diluted Magnetic Semiconductors Quantum Well

Semiconductor devices that exploit spin as well as charge would operate faster thanrnconventional microelectronic devices and would offer new functionality.The main challengernin building such device is transporting spin-polarized electrons efficiently intornand out of the semiconductor region of the device. In the first parts of this thesis,rnwe reviewed the possible magnetic interaction in the bulk diluted magnetic semiconductors.rnAt the last part of the thesis the effect of the small wave vector gaplessrnGoldstone mode of spin excitation on the temperature dependence of the magnetizationrnis discussed for 3D and 2D Mn spin configuration for modulation doped DMSsrnquantum well. In the 3D case the magnetization decreases as power of three by fourrn(Trn3rn4 ) with temperature and for the 2D configuration it decreases as a power of halfrn(Trn1rn2 ) with temperature. The specific heat of the Mn-spin system increases as a powerrnof three by four and by half for 3D and 2D configurations respectively

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