The Oxidation Kinetics And Interface Stability Of Silicon (si) And Cobal Tdisilicide (cos2) In Dry Thermal Oxidation

Oxidation kinetics and interface stability of Si, surface and buried CoS~ have been studied inrntemperature range of 1000-1150 ·C in dry oxygen ambient. Measurement of the thicknessrnof Si02 formed by the oxidation of Si, surface and buried CoS~ show a linear-parabolicrnbehavior in time. The Characterization was performed by Rutherford backscatteringrnspectromelly (RBS) and Ionchanneling of 1.4 MeV He+ ion, Van der Pauw resistivityrnmeasurement, ellipsomelIy and cross-sectional transmission electron microscopy eX -TElv!)rnfor micro-structural analysis. The comparison of oxidation rates of Si with surface andrnburied CoS~ is performed and it was found that the rate is higher for surface CoS~ forrntemperatures 1000 ·C, 1050·C and HOO ·C and the rate for Si is higher for 1150·C but thernrate of Si and buried CoSi2 are found to be the same for 1150·C

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