Most of the semiconductor materials are diamagnetic by nature and therefore cannotrntake active part in the operation of the magneto-electronic devices. In order tornenable them to be useful for such devices efforts have been made to develop dilutedrnmagnetic semiconductors (DMS) in which small quantity of magnetic ion is introducedrnin to normal semiconductors. The first known such DMS are II-VI and III-V semiconductorsrndiluted with magnetic ions like Mn, Fe, Co, Ni, etc. Most of these DMS exhibitrnvery high electron and hole mobility and thus useful for high speed electronic devices.rnCdMnTe systems with face centered cubic structure and long-range antiferromagneticrnordering is investigated with in the frame work of the Heisenberg model.rnThe Hamiltonian includes exchange interactions with the nearest neighbors and Zeemanrnterms. Calculations are performed using Holstein-Primakoff transformation andrnGreenâ€™s function formalism. Temperature dependencies of the spin-wave specific heatrnand reduced magnetization are determined. In addition to these linear concentrationrndependence of Neel temperature is also predicted.rnThe spin-wave energy shows T4 temperature dependence, where as the predictedrnmagnon part the heat capacity is proportional to T3 which is similar to the Debyernphonon heat capacity. The sublattice magnetization decreases quadratically withrntemperature in the low-temperature region. But the dependence of the Neel temperaturernon the manganese ion concentration is linear. All the findings are in broadrnagreement with experimental observations