Electronic Properties Of Junctions Between Aluminum And Poly(3-(25-dioctylphenyl) Thiophene) (pdopt) Thin Films.

This thesis is based on the study of the electrical properties ofrnthe Sckottky barriers formed between aluminum and spin-coated filmsrnof PDOPT in the form of AI/PDOPT/PEDOT-PSS/ITO andrnAIIPDOPT/ITO sandwich structures, respectively. From the I-Vrncharacteristic, the rectification ratio, diode quality factor and barrierrnheight have been obtained for both AIIPDOPT/PEDOT-PSS/ITO and forrnAIIPDOPT/ITO structures.rnThe Cole-Cole plot of the complex impedance spectra forrnAI/PDOPT/ITO exhibits part of a single bias voltage-dependantrnsemicircle, which is a characteristic of most metal semiconductorrnjunctions. The complex impedance spectra of AI/PDOPT/ PEDOTPSS/rnITO device showed two partially overlapping semicircles at reveresrnbias voltages which revealed the existence of thin insulating interfacialrnlayer at metal/polymer junction

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