Transport Properties Of Charge Carriers In Organic Polymer Films Used In Field Effect Transistor

Application of a gate bias to an organic field-effect transistor leads to accumulationrnof the charge carriers in an organic semiconductor within a thin region near anrninterface of the gate dielectric. An important question raised by this study isrnwhether the charge transport in the region can be affected by thickness layer ofrnsemiconductor, the morphology of active material and the gate bias are consideredrnas the factor for varying charge carrier mobility for this particular study.rnIn order to answer this question, we have performed Montecarlo simulation ofrncharge transport in organic field-effect transistor structure with a varying thicknessrnof the organic layer, the gate bias, and the morphology of active material taking intornaccount Coulomb interactions. We explain the charge carrier mobility as a functionrnof field strength for disorder parameter ^_ = 4 and ^_ = 3 to draw a conclusion forrnstrong disorder charge carrier mobility is good enough than weak disorder, Forrngate bias since the number of particles on metallic contact depend on the gate biasrntherefore when we increase the gate bias charge carrier mobility increases and forrndifferent organic layer thickness specifically up to the third layer the charge carrierrnmobility increase which leads us to a conclusion that charge transport in organicrnsemiconductor layer should be considered three dimensional.

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