Simulation Of Three-layer Solid State Memcapacitor

Memcapacitors are capacitors whose capacitance depends on the past states throughrnwhich the system has evolved. The focus of this thesis is on the possible realization ofrna three-layer solid-state memory capacitive (memcapacitive) system. The functioning ofrnthis device is based on the slow polarization rate of a medium between plates of a regularrncapacitor. To achieve this goal, this work considers a three-layer structure embedded in arncapacitor. The three layer structure is formed by metallic layers separated by an insulatorrnso that non-linear electronic transport between the layers can occur. Unlike conventionalrncapacitor, the capacitance of this device depends on the history of the system. Ourrncalculation shows non-pinched hysteretic charge-voltage and capacitance-voltage curves,rnand both negative and diverging capacitance within certain ranges of the field. Thisrnproperty of memcapacitive system makes it a good candidate for non-volatile memoryrnapplication.

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