Experimental Investigation Of Electrophysical Properties Of Hydrogenated Amorphous Silicon

The I-V characteristics, the dc conductivity o(T), and thernfrequency dependent conductance G(w) and capacitance C(w) ofrnhydrogenated amorFhous silicon thin films, prepared by thernHOMO CVD method, are reported. A temperature and applied voltagernrange dependent nonlinear I-V characteristics ~las obtainedrnfor films withspdium substrate. The temperature dependentrndc conductivity was found to obey the band conduction modelrnfor the 296-4l7K temperature range. The frequency dependentrnconductance G(w) exhibited a nonlinear frequency dependence.rnG(w) showed a large temperature dependence and its frequencyrnexponent S found to decrease with increasing temperature. Thernac results, being analyzed with reference to five models of acrnconductivity in amorphous semiconductors, agreed ~lith therncorrelated barrier hopping model for the lOKHZ-UIHZ frequencyrnrange

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