Implantation Of Ti Into Oxides For Optical Applications

Titanium (Tt2) implantation and annealing of lithium niobate (LiNbOJ) and sapphirern(AI,OJ) has been investigated using RES and SIMS measurements. The implantation wasrndone at room temperature with doses- IOI5Ti/cm2, IOHTi/cm2, 5xl01"Ti/cm2 and I017Ti/cm'.rnThe energy of implantation was 400 ke V. After implantation the samples were annealedrnwith oven (10600C for one hour) and rapid thermal annealer (10600C for one minute). Forrnthe A1PJ samples high temperature furnac;~ ~l!Pea(in'g '(14P.Q°(; [o:r, oQ~:ho~r) y.,~s'aho ~sed.rnThen, the implanted and annealed sampl~esw!'n, al1alysecl "lith. ~u!~~rf~rJ B~cks~att~ringrnSpectrometry using He+ ions as the an~lysing~e~I]1':,,!ith:an:ere~gl{o ~fJA.~e,j. Moreover,rn, . ,rnthe LiNbOJ samples were analysed with .sr.~~nd:a;Y: Io'n M~~~, S,p~c~rp~~;.y, )'i>e, paperrnpresents the experimental results obtained from the RES and SIMS measurements

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