Metal Semiconductor Schottky Barrier

In this f,hesis theoretical ano mq)u'imlJlltaI illvestl9iltion of metalsemiconductol'rnjuncitol1 cow;Is'Ung of Aluminium dep()3ited on monocyrstallinernsilicon are discdbed.rnThe films of Alluminium howe bacm depositeci on P-type silicon, in thern' and ot'lentation and resistivities of 7-13 and 100 ohm-cm, by vacuumrndepositon. The silicon wafters have been h'eated chemically. The experlemtnalrnprocedures followed in the work are; the I-V vharacterlstics. forward blasernand C-V characteristics for different frequencies of superimposed signal 10kHz,rn20 kHz, 40 kZ, 100 kZ and 100 kHz. Measurement have been made usingrnhp Model 4275A multi frequency meter and 4041 B pA meter IDc voltage sourcernfor C-V and I-V characteristics respectively. Low frequency C-V measurementrn(Quasistatic capacitance-voltage) have been tried using hp 4041 B pA meter"rnbut inconsistency of the result (maybn lack of appropriate test fixture)rnWe have developed all the softwat"e programmes used for the present work.rnthe barrl

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