Impurity atoms (indium and tellurium ) were incorporated in silicon through an implantationrnprocess. The samples were annealed to remove radiation damage. The formation ofrnCd-Te complex and the temperature dependence of the quadrupole interaction frequencyrn( QIF) were studied with help of perturbed 7 — 7 angular correlation ( PAC) technique.rnThe observed pairing between Cd and Te was due to the interaction between acceptorsrnand donor atoms in silicon. This explains how the presence of Te influences the lattice siternof the Cd atoms. The unique quadrupole interaction frequency UQ = 444M H z was associatedrnto this complex formation. The strong quadrupole interaction frequency, 444MHzrnat room temperature, decreases to 388MHz at 7U 0°C' which is associated to the statern(