The investigation of the effect of size variation on intensity of thermoluminescence emissionrnfrom spherical amorphous silicon quantum dots using the model of interactive multirntraps system (IMTS) model were studied in this work. The IMTS model consists of onernactive electron trap (AT), one thermally disconnected deep trap (TDDT), and one recombinationrncentre (RC). Numerical simulations are carried out for quantum dots of diametersrn3, 4, 5 , 6 nm to determine TL glow curve and relevant important kinetic parametres.rnWe find that as the size of the Silicon QDs decreases, the intensity of thermoluminescencernsignal increase, the peak temperatures for each quantum dots is almost remainsrnindependent of the size of dots and the TL glow curve looks like first order kinetics.rnAlso, by employing one-trap-one recombination centre (OTOR) model, we showed thatrnthe glow peaks of the quantum dots shift towards high temperature values, the widthsrnof the glow curves gets broader and broader with an increase of the dots while the glowrncurves seems to obey second order kinetics. Furthermore, as the temperature increase;rnthe concentration of electrons n(T) in the AT decreases, the concentration of electronsrnin the TDDT m(T) increases, and as the quantum dot size increase, concentrations ofrnelectrons nc(T) also increase. In addition the symmetry factor (Î¼g), activation energy (E)rnthe order of kinetics (b) as well as the instantaneous concentration of carriers in the trapsrnand recombination centre are numerically simulated. The results obtained may be usedrnwhile fabricating dielectric compounds enriched in silicon contents for TL applications.rnFurthermore, it may motivate further theoretical and experimental investigations of thernstudy of the TL phenomena in silicon quantum dots.