Charge Transport Across Metal P-type Semiconductor Interfaces

In this study, we considered the thermionic emission, field emission and tunneling andrnwe derived current density as a functions of different parameters such as, temperature,rnbarrier height, work function, bias voltage and dopant concentration for thermionicrnemission, field emission and tunneling enhanced electron transport across metal andrnP-type semiconductor interfaces.rnThe result shows that the thermionic current density is increasing exponentially as arnfunctions of bias voltage, the current density is also increasing as a quadratic functionsrnof temperature and current density is increasing linearly as a functions of dopant concentration.rnTherefore, we carry out investigation how these factors affect the currentrndensity and we solve the current density analytically with a given parameters. Thernresults are plotted using gnuplot.

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