Electron Transport In Silicon Carbide System

In this work electron transport in silicon carbide (SiC) system were considered.rnThe calculations are done based on Density Functional Theory (DFT) which adoptrna use of the generalized gradient approximation (GGA) in PBE. An abinit codernbased on the DFT is applied. From the calculations, we obtained optimum valuesrnof lattice constant (parameters), bulk modulus, cut-o energy, and di erent energiesrn(surface energy, cohesive energy, vacancy energy) of silicon carbide. Thesernresults are reported using a step-by-step approach and compared with other exprimentalrnvalues. Analysis based on bandstructure, density of state, projectedrndensity of state, work-function, and optical properties are also presented. The opticalrnproperty has a direct relationship with the distribution of crystal bandgaprnand electronic density of state. The Monte Carlo method takes into account bandrnstructure model to investigate electron transport.

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