Surface Plasmon Polarltions And Determination Of Complex Dielectri C Permittivity And Thickness Of Thin Metal (semiconductor) Films

Surface plasmon-pola r itons ( S21P) 100:' c.h c. .. . n be ~Jr.C. i.1 .e.o 'JO , ., ..rndiel~c tric/, le t.::l (d i clcrtrich;emiconduc tor) interlace ca n be used a s;rnhi ghl } se n sitiy~ non dis tructive probe for the de t ermination of therndie l e ct r ic consto.n t t: (w) - E: I (w) + t e" (w) and th i ckness h of a me t a lrnsemi conductor) f ilm wi t hou t a pr e set expression for f eW).rnThe t heo r e tical background of t he method [3] i s baf:ed on therns ol ution of the Maxwell ' s equationa whi ch provides the dlspe rssionrnequa tion of SPIP at t he surface of a thin meta l ( s emiconductor) filmrnand i t s i n t erpretat ion i n t er~s of at t enuated t o t a l r eflec tion (ATR)rncha rac terist i c s . The physical sense of : ne solution Is demons t r a t edrnt hr ough t he power flows and the field d i::;';r!.butions of SPIP an.d o t he rrnpos s ~ble e xc i tations .rnIt i s s hoW_t .:hat [or str.lng absorbing meta l s (semi conduc t o r s)rnl ow r2.oi a t i ve SPIP can exi&t at: f requencies higher than rh"!: pl aslnarnfr eq-uenc y wp • . The aualYSJI> of the a ppr o:

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