Optical And Electrical Properties Of A-sih Multilayer Solar Cells

The transmittance spectra of a-Si:H pin solar cell samples having different i-layer thicknessrnwere measured with a Perkins Ehner Lambda 19 spectrometer. The spectra were simulatedrnwith the SCOUTFIT computer program by making use of the Forouhi and Bloomer dielectricrnfimction model to determine the values of the optical parameters (energy gap, refractive indexrnand layer thickness) of the different layer systems (glass, TCO, p-, i- and n-Iayers) of therna-Si:H solar cell samples. The fitted values of the optical parameters are found to be in goodrnagreement with published values.rnThe I-V characteristics curves of a-Si:H solar cells were measured. The parameters J", V" , 11rnand FF for the different samples, when the samples were illuminated with light of differentrnintensities are determined and compared with published results. The paper presents thernexperimental results obtained from the transmittance spectra and the I-V characteristicsrnmeaSUl'ements of the solar cell samples

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