Temperature Dependence Of The Optical Properties Of A-sih Thin Films For Solar Cells

In the fundamental absorption region, near normal incidence reflectance Randrntransmittance T measurements can provide information about optical properties of thin films [1]rn. Temperature dependent optical properties of p - , i - , n - layers of a-Si:H films have beenrnstudied. The behavior of reflectance R and transmittance T as a function of temperature ofrna-Si:H thin films is analyzed. From temperature dependence of Rand T the temperaturerndependence of the absorption coefficent «(I.) is calculated using Hishikawa relation. From therntemperature dependent absorption coefficient, the variation of the optical energy gap of the filmsrnwith temperature is determined. Finally its effect on solar cell applications is discussed

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