Monte Carlo Simulation Of Diffusion Coefficient And Average Energy Of Charge Carriers In A Disordered Organic Semiconductors

One of the most remarkable results known for energy relaxation of charge carriersrnin a Gaussian DOS is the existence of the so called equilibration energy. With thernhelp of computer simulations, we study the relaxation of charge carriers and theirrncorresponding diffusive character in a zero electric field region. The relaxation timernis of key importance for the analysis of analytical and numerical results in this studyrnbecause it determines the transition from dispersive to non dispersive (Gaussian)rntransport behavior. So this project reviews the strong dependence of relaxation timernon temperature.rnWe propose also a Gaussian disordered model (GDM) based on the hopping transportrntheory of charge carriers (non-interacting particles) to study the relaxation phenomena,rnthe equilibration energy ⟨"∞⟩ and the effect of diffusion in thermal equilibrium inrnthe absence of electric field.In addition we reproduced numerical results of the meanrnenergy and dispersion of charged carriers using the model we have designed andrncompared our results with those in the literature, found using kinetic Monte-carlornsimulation techniques for different values of temperature. Through our simulation,rnwe observed that the mean energy of the particles and the carrier diffusion are bothrndepend on temperature and our analytical discussion also approves the same phenomena

Get Full Work

Report copyright infringement or plagiarism