Determination Of Optical Constants Of A Conducting Polymer Using Reflection Rllipsometry Technique

The reflection Ellipsometry technique is employed for the determination of opticalrnconstants of a conducting polymers of thin films using a He-Ne laser wavelength ofrn632.8 nm and tunable diode laser wavelength 808.4 nm, respectively. The same techniquernis also applied to determine the thickness of the thin film. In this experimentrntwo methods are employed to determine the refractive index of the sample. Thernrotating analyzer ellipsometry technique and the static photometric technique. Thernrefractive indices obtained for the polymer sample at the rotating analyzer angle ofrnincidence 600 using He-Ne laser of wavelength 632.8 nm and tunable diode laser ofrnwavelength 808.4 nm are 1.73320 ± 0.000013 and 1.73010 ± 0.000015, respectively.rnAlmost all the results are reproduced using, the second method called static photometricrntechnique. The average calculated results at the wavelengths of 632.8 nm andrn808.4 nm are 1.7577 and 1.5862,respectively.rnThe results for the thickness measurement obtained using Ellipsometry techniquernstrongly agrees with the results obtained from the talystep measurement, the thicknessrnof the sample lies between 30 - 40 nm, where as the calculated results at wavelengthsrnof 632.8 nm and 808.4 are 37.8 ± 0.00098 nm and 37.5 ± 0.00077 nm, respectively

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