Electrical Conductivity And Drift Mobility In Heavily Doped N-type Silicon With Mixed Scattering

In this thesis I have calculated the electrical conductivity and drift mobility in heavily doped n-typernsilicon in the presence of band tail effects considering mixed scattering of ionized impurities andrnacoustic phonons.rnThe results of the calculation show that the electrical conductivity can be as much as 58% lowerrnthan the value obtained by using parabolic density of states and the drift mobility in heavily dopedrnn-type silicon on the other hand is 40% lower than the value calculated using parabolic density ofrnstates

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