X-ray Study Of Dynamics Of Growing Wetting Films

The dynamics of growing wetting films is studied by the method of x-ray scatteringrnin the region of total external reflection. "ith a short pulse disturbance caused byrna temperature difference between the substrate and the "apour in the x-ray cell. thernwetting film thickness is reduced. Afterwards the time dependence of the -growing filmrnis monitored by x-ray reflectivity measurements. The examined sample systems arernH2/Si. CH.3/Si . Ge/Si and a quartz glass wetted by a liquid film of CCk The obsen'edrngrowth kinetics of the wetting layers are discussed in the framework of a model whichrnis adapted to the experimental conditioll5. particularly the finite temperature stabilityrnof the experimental set-up. From the growth law l(t) rx I ~ exp:~(t/T)nl fitted to therndata. the time constants T and the dynamic exponent 11 are determined. The quallt ityrnn depends on the dimension of the growth mechanism

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