Experimental Study Of Charge Distribution In Metal Oxide Semiconduc For (mos) Structure

1~heprotical l.~[;VieVl O.i! MOS ntx'l!cture l.B done.rnIdeal NOS 'S::.t'uct".Ul:e HiHl cOrlsidm:od :arst. After itrnvariuus eifedt:5 8uci! as wOl'k func'cion difference~ "rnoxide chaY.'ges etc, thllt deviute the ideal MOSrnproperty are cU s'~ussed.rn~~hree eJ.0ci:r1cal me«flurell1elll: techniques arerndlSCUUt;0U. 'I'he capacitance meD.sUrt!)ment technique atrnroom temperature is used for the experiment.rnDesc:dpt:!.on of the experimentd. set up is glven andrnproperties of indi vi-dual :l.ns·~'Cuments :l.ncluding therncon1f)uter are dl.·!;;cnssed.rnMeasurement :I.s done on th~,:en samples. Insulatinqrn1:t' ,at bias valuern- Q,95v and ': o.:';::v. 'Ii", o~"as value are :i.l'!dependent of frequency.' The capacitance values of the peaksrndec).'ease wH.h frequency rn.

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