In this thesis, we studied Coulomb blockade oscillations, tunneling and electronsrntransport through a quantum dot. Coulomb blockade oscillations of the conductancernare a manifestation of single electron tunneling through a quantum dot. We focus onrnthe electron transport between the dot and source(drain). The model of the study isrnthe linear conductance capable of describing the basic Physics of electronics states inrnthe quantum dot. Using the master equation analytic expression for the current(I)rnthrough the quantum dot was derived and obtain the linear conductance through therndot which is de_ned as G = limV!0( IrnV ) in the limit of in_nitely of small bias voltage.rnWe will distinguish three temperature regimes, e2rnC _ KBT, the discreteness of therncharge cannot be discerned, _E _ KBT _ e2rnC , the classical metallic Coulomb blockadernregime many levels are excited by thermal uctuations, and KBT _ _E _ e2rnC ,rnthe quantum Coulomb blockade regime, a few levels participate in transport.rnFinally, we have performed the numerical computation of electron transport throughrnthe quantum dot. We present graphs of the results for using the equations that wernderive. The linear conductances are plotted as a function of the gate voltage. ThernCoulomb blockade oscillations occur as the voltage on a nearby gate electrodes varied.rnIn the valleys, the conductance falls o_ exponentially as a function of the gate voltage.rnFigures (4.1-4.8), are the result of the study. At some intermediate temperature, thernconductance shows one oscillation but vary for the positive and negative gate voltage.rnAt high temperature, no oscillation conductance and at low temperature conductancernoscillates for some appropriately chosen capacitance.