Effects Of Electric Field On A Charge Carrier Mobility In Disordered Organic Semiconductors For Different Localization Length (monte Carlo Simulation)

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Organic semiconductors (OSCs) have attracted increasing interest since they havernproven to be a potential use as active material in electronic devices such as organicrnlight emitting diodes (OLEDs) and organic field effect transistors (OFETs). Theyrnare composed of molecules which are held together by Van-der Waals forces whichrnare weak compared to covalent bonds and because of this OSCs are flexible and fabricatedrneasily at low temperature. Van-derWaals bonding has an effect of formingrnnarrow electronic bandwidths and weak intermolecular interactions which in turnrnlead to special and energetic disorder, and also localization of charge carriers. Thus,rnthe charge carrier mobility in organic semiconductors is generally much smallerrnthan that in covalently bonded crystalline inorganic semiconductors. Besides thisrnone of the problems for the practical applications of organic semiconductor is lackrnof an understanding of charge carrier transport properties.rnIn this thesis, we investigate the charge carrier transport behavior of numericalrncode we developed using Kinetic Monte Carlo (KMC) simulation technique on thernbasis of Miller and Abrahams rate equation. Particularly we will show the mobilityrnof charge carrier as function of electric field taking into consideration the effects ofrntemperature, disorder parameter (known as Gaussian width), localization lengthrnand charge carrier density. In our simulation, the results will compare by variationrnof localization length, charge carrier density and Gaussian width.

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Effects Of Electric Field On A Charge Carrier Mobility In Disordered Organic Semiconductors For Different Localization Length (monte Carlo Simulation)

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