Silicon low dimensional structures are found to be extremely stable in comparison to bulkrnsilicon along with variety of interesting electronic properties. They are established as potentialrncandidates for various promising applications in advanced nano-electronics devices especiallyrnin a nano-switch to be specific. Here we are presenting our most recent and most detailedrnresults for electronic and transport properties of ground-state structures of Sin, SinH and SinOrnclusters using DFT- LDA-NEGF simulations. From our present set of studies, a high degree ofrnstructural stability is observed in very small Sin nanoclusters of various sizes; n = 4, 6, 7 and 8.rnAmongst several diverse and stable clusters, the Si6 is found to possess a maximum stability.rnThe energy gaps in between LUMO-HOMO of Si clusters are also found to be decreasing withrnthe â€œnâ€ in accordance with general principles of a quantum confinement with an exception ofrnthe Si6 cluster. Density of states spectra (DOS), transmission spectrum (TS) and currentvoltagern(I-V) calculations are also preformed. Various TS spectra results are mostly discussedrnin contest to charge transfer phenomena, states injection in between various components of thernnanodevices and their ensuing effects on the nanoswitching. We have also ascertainedrnincreased cluster stability with the passivation and the presence of a significant contributingrnstates at fermi energies in nano devices that are made up of these clusters. A novelrnphenomenon of a negative differential resistance becomes pragmatic in I-V curves of thesernsamples and it is discussed in relation to the Q-confinement induced singularities among thernconcerned nanostructures. I-V characteristics curve of a device ZGNR/Si8H/ZGNR showsrnstrong nonlinearity as a result it can be fruitfully deployed for the nano-switch. Various luridrnprospects of nano-swtcing using Sin nanoclusters are also conferred in the present work.