A Model For Thermoluminescence From Silicon Nanostructures

Light emission from silicon nanocrystallites has received considerable attention inrnrecent years due to its application in field emission and display devices. Most ofrnthe bulk materials start showing fascinating behaviors as their size is reduced to nanornlevel.The ability to emit light as a consequence of absorption of energy (luminescence)rnis one of these behaviors.There are different types of luminescence observed fromrnnanosilicon. One of the different kinds of luminescence is thermoluminescence, whichrnis the emission of light from an insulator or semiconductor when it is heated, thatrnis it is the thermally stimulated emission of light following the previous absorptionrnof energy from radiation. So, there is a direct relationship between temperature andrnthe thermoluminescence intensity. Therefore, in this work, we specifically derive thernmathematical expression for the thermoluminescence intensity from silicon quantumrndots as function of temperature and size of the dot using two proposed models. Wernalso calculate the activation energy as a function of temperature and size of the dotrnusing our model calculation for activation energy. Some of our results are quite newrnand requires future studies

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