Variation Of The 111 Cd - P Population In Silicon With Annealing Temperature.

Studying the nature of defects in semiconductor helps to minimize the undesiredrnbehaviors they contribute. In this study, the perturbed angular correlation methodrnhas used to understand the formation of the substitutional %$'&)(+* pairs in silicon.rnT 0/2h1e pairs are characterized by a unique quadrupole interaction frequency of ,- .rn MHz, that suggest a strong interaction between acceptor and donor atoms inrnan elemental semiconductor silicon. The variation of the nearest neighbor * %$'&3( population with the annealing temperature is discussed. Finally, the bindingrnenergy and ratios of free and trapped states around the complex are determinedrnusing the fraction of the probe atom that form the pairs at annealing temperaturernintervals of 700C-100CrnrnrnrnrnrnrnrnrnrnrnrnrnrnrnrnC-1000C

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