Temperature And Dopant Density Dependence Of Electron Conductivity In N-type Silicon

The electrical conductivity of n-type silicon depends on the doping concentration and tem-rnperature where ionized impurity scattering and acoustical phonon scattering are the dominantrnscattering mechanisms. In this work, it is seen that the electrical conductivity of n-type sili-rncon increases as the electron concentration increases e.i., when there are more ionized impurityrnthere are more scattering from straight line path, so this reduces mobility. The expressions forrncomputing conductivity as a function of dopant density and temperature has been formulatedrnfor n-type silicon. The electrical conductivity of n-type silicon was calculated numerically byrnappropriately combining ionized impurity and acoustical phonon scattering and the result werngot are in agreement with those in the literature. The calculation cover at various ranges ofrndopant densities and temperatures. As the data of numerical computation show, as temperaturernincreases both mobility and conductivity increase where as relaxation time decreases. More-rnover, as the dopant density increases, both relaxation time and conductivity increase where asrnmobility decreases.

Get Full Work

Report copyright infringement or plagiarism