Optical Characterization Of Thin Film Solar Cells

The optical propenies of glow discharge ( GO ) produced p-. i-. and n- layersrnof hydrogenated amorphous Silicon a - Si : H. thin films have been investigatedrnover a wide photon energy range 1.24 eV < E < 3.54 eV using room temperaturernreflectance ( R ) and transmittance ( T) measurements. The data is comparedrnwith room temperature Rand T measurements done on the same samples in thernlaboratory of lSI - PV in Forschungszentrum, Jue/ich. Germany over an energyrnrange of 1. 13 eV < E < 4. 13 eV. The similarities and dffferences betweenrnindividual Rand T measurements done in the two laboratories and opticalrnfunctions deduced from the measurements are discussed. A common value forrnthe optical energy gap within the va lue ( up to .:': 0.04 eV) is obtained. As a solarrncell component. the investigated sample p- layer does not harvest effectivelyrnphotons from the visible sunlight energy spectrum. The possibility of thernmeasurement of optical constants in the Addis Ababa University Department ofrnPhysics is verified for the first time.

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