Electrical Properties Of Junctions Between Aluminium And Poly (3-(25-dioctylphenyl)-thiophene) (pdopt)

This thesis is based on the study of interface properties between a reactive metal and a neutralrnconjugated polymer. The polymer used is poly(3-(2,5-dioctylphenyl)-thiophene) (PDOPT).rnThe techniques employed are absorption spectroscopy, current-voltage and complexrnimpedance spectroscopy measurements.rnThe absorption measurement reveals that the polymer, PDOPT, has an energy gap of aboutrn2.02 eV and hence it belongs to the class of semiconducting materials. The I-V characteristicrnof AVPDOPTIITO structure shows symmetrical but non-ohmic curves. The complexrnimpedance analysis exhibits a single semicircle whose diameter depends on the magnitude ofrnthe applied voltage. For smaller values of the applied voltage, both for the reverse and forwardrnbiases, the extrapolated diameter of the semicircle is larger. This value is consistent with thernresult of the I-V measurements. So this device, AVPDOPTIITO, may be considered as arnmetal-semiconductor device with no rectifying Schottky barrier formation at the AVPDOPTrninterface. The small value of current may be due to high bulk resistance of the polymer, asrnwell as the probable formation of thick oxides of aluminium

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