Absorption Coefficient And Dielectric Function Of Direct Band Gap Silicon Nanocrystallites

Silicon is an ubiquitous electronic material and the discovery of strong room temperaturernluminescence from porous silicon in 1990 raised hopes it may find a new leasernof life in the emerging field of optoelectronics. First, the luminescence was shown tornbe emitted from nanostructures in a porous silicon network. Later the same emissionrnwas seen from silicon nanocrystallites and the concept of a silicon quantum dotrnemerged. A number of different models have been proposed for the origin of the lightrnemission. Some involve interface states between a silicon nanocrystallite and a surroundingrnshell, while others consider the effect of quantum confinement in an indirectrnbandgap semiconductor.rnIn order to clarify the influence of morphological properties, such as size or shape, ofrna silicon nanocrystallite on its optical properties, calculations of optical absorptionrncoefficient and dielectric function of silicon nanocrystallites as a function of effectivernsilicon nanocluster size (diameter) and photon energy were attempted using k.prnmethod.rnTo conclude, the work presented in this thesis gives support to the quantum confinementrneffect in explaining the optical properties of band gap nano-sized silicon belowrn10nm, as well as highlighting the importance of calculating optical parameters ofrnsilicon nanocrystallites to understand optical properties in the luminescence process

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