Electrical Properties Of Junctions Between A Aluminum And Poly3-(2-butyloxy-5-(1- Oxooctyl)phenyl)thiophene

The electrical properties of junctions between a low work function metal (Al) and poly[3-(2’-rnbutyloxy-5’-(1’’’-oxooctyl)phenyl)thiophene] in the form of Al/polymer/ITO sandwichrnstructures have been investigated by means of complex impedance spectroscopy, currentvoltagern(I-V), and capacitance-voltage (C-V) characteristics. The current–voltage curve isrnnon-ohmic and reveals Schottky barrier type of rectification. The C-V data together with I-Vrncharacteristics confirms the polymer is a p-type semiconducting polymer. The complexrnimpedance spectroscopy shows the absence of an insulating interfacial resistive layer.rnSchottky device parameters have been calculated from I-V curve by applying the thermionicrnemission equation. As result, saturation current density ( ) 2rn13rn0 2.2 10rncmrnJ A − = × , idealityrnfactor (n) = 3.5, rectification ratio = 1761, built-in voltage = 0.96V, potential barrier = 1.11eV,rndopant density 17 3 ( ) 4.83 10 − N = × cm a , and depletion width at zero bias voltage = 25.7nmrnhave been deduced from our experimental data

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